| PART |
Description |
Maker |
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| RJP4002ASA-00-Q0 RJP4002ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP5001APP-00-T2 RJP5001APP |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP5001APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| CY20AAJ-8F |
GTS03024-2s-025 N沟道IGBT的的频闪闪光
Nch IGBT for STROBE FLASHER
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Powerex, Inc.
Powerex Power Semiconductors
Cypress Semiconductor
Mitsubishi Electric Corporation
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
